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Qualitative and Quantitative Analysis of Stacking Disorder in α-and β-SiC by X-ray Diffraction and Structure Modeling

Published online by Cambridge University Press:  10 February 2011

Bogdan Palosz ,
Svetlana Stel'makh  and
Stanislaw Gierlotka
Bogdan Palosz
Affiliation:
High Pressure Research Center UNIPRESS, ul.Sokolowska 29, 01 142 Warsaw, Poland
Svetlana Stel'makh
Affiliation:
High Pressure Research Center UNIPRESS, ul.Sokolowska 29, 01 142 Warsaw, Poland
Stanislaw Gierlotka
Affiliation:
High Pressure Research Center UNIPRESS, ul.Sokolowska 29, 01 142 Warsaw, Poland
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Abstract

A method of analysis of disordering in α- and β-SiC polycrystals by numerical modeling, and a simulation of X-ray diffraction profiles are presented. The diffraction patterns of nonperiodic structures were simulated for models of 2000 layer fragments of the structure. Computer generation of the models was based on the Poisson function describing the size distribution of the domains of basic polytypes and faults. The models were quantified by a set of input probability parameters describing relative frequencies of the occurrence of the domains of polytypes and faults. Implementation of a correlation parameter that characterizes coherence of sequential domains of a given polytype assures a good reproducibility of the simulated diffraction profiles obtained for the same set of the model parameters. Based on this method, a quantitative analysis of disordering in polycrystals of SiC annealed in the temperature range 1100–2200 °C was performed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 235
Copyright
Copyright © Materials Research Society 1996

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References

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