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PVT Growth of 6H SiC Crystals and Defect Characterization

Published online by Cambridge University Press:  15 March 2011

Govindhan Dhanaraj ,
Feng Liu ,
Michael Dudley ,
Hui Zhang  and
Vish Prasad
Govindhan Dhanaraj
Affiliation:
Dept. of Materials Science and Engineering, State University of New York at Stony Brook Stony Brook, NY 11794
Feng Liu
Affiliation:
Dept. of Materials Science and Engineering, State University of New York at Stony Brook Stony Brook, NY 11794
Michael Dudley
Affiliation:
Dept. of Materials Science and Engineering, State University of New York at Stony Brook Stony Brook, NY 11794
Hui Zhang
Affiliation:
Dept. of Mechanical Engineering, State University of New York at Stony Brook Stony Brook, NY 11794
Vish Prasad
Affiliation:
Dept. of Mechanical Engineering, Florida International University, Miami, FL 33199
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Abstract

SiC single crystals have been grown by seeded sublimation method using physical vapor transport (PVT) system designed and fabricated in our laboratory. A novel multi-segmented graphite insulation has been used for improved heat containment in the hot-zone. Numerical modeling was used to obtain the temperature field and predict various growth parameters. The grown crystals were characterized using AFM, SWBXT and chemical etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J5.31
Copyright
Copyright © Materials Research Society 2004

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References

1. Lebedev, A. A. and Chelnokov, V. E., Semiconductors 33, 999 (1999).Google Scholar
2. Carter, C. H. Jr., Tsvetkov, V. F., Glass, R. C., Henshall, D., Brad, M., Muller, St. G., Kordina, O., Irvine, K., Edmond, J. A., Kong, H. S., Singh, R., Allen, S.T and Palmour, J. A., Mater. Sci. Engg., B61–62, 1 (1999).Google Scholar
3. Glass, R. C., Henshall, D., Tsvetkov, V. F. and Carter, C. H. Jr., MRS Bulletin 22, 30 (1997).Google Scholar
4. Dmitriev, V. A., and Spencer, M. G., Semiconductors and Semimetals 52, 21 (1998).Google Scholar
5. Yakimova, R. and Janzen, E., Diamond and Related Materials 9, 432 (2000).Google Scholar
6. Chelnokov, V. E. and Syrkin, A. L., Mater. Sci. Engg., B46, 248 (1997).Google Scholar
7. Dhanaraj, G., Huang, X.R. Dudley, M., Prasad, V. and M, R.H., chapter 6, p181–232 in “Crystal Growth Technology, Eds Byrappa, K., Ohachi, T., William Andrew co-published with Springer, NY 2003 Google Scholar
8. Growth and Characterization of SiC single crystals, Dhanaraj, G., Dudley, M., Ma, R.H., Zhang, H. and Prasad, V., p882–494 in “Crystal Growth of Technologically Important Materials” Eds Byrappa, K., Ohachi, T., Klapper, H. and Fornari, R., Allied Publishers Pvt. Lts. New Delhi 2003.Google Scholar
9. Ma, R.-H., Zhang, H., Prasad, V., and Dudley, M., Crystal Growth and Design 2, 213 (2002).Google Scholar
10. Sanchez, E. K., Kuhr, T., Heydemann, D., Snyder, W., Rohrer, S., and Skowronski, M., J. Electronic Materials 29 347 (2000).Google Scholar