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Pulsed-Laser Deposition of Titanium Nitride

Published online by Cambridge University Press:  21 February 2011

Wenbiao Jiang ,
M. Grant Norton ,
J. Thomas Dickinson  and
N.D. EVANS
Wenbiao Jiang
Affiliation:
Department of Mechanical and Materials Engineering and
M. Grant Norton
Affiliation:
Department of Mechanical and Materials Engineering and
J. Thomas Dickinson
Affiliation:
Department of Physics, Washington State University, Pullman, WA 99164
N.D. EVANS
Affiliation:
Oak Ridge institute for Science and Education, Oak Ridge, TN 37831
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Abstract

The pulsed-laser deposition technique has been used to form thin films of TiN on (100)-oriented single crystal substrates of silicon and rocksalt. Using atomic force microscopy, it was revealed that TiN films grown on silicon at substrate temperatures ranging from 50°C to 500°C were extremely smooth—the mean roughness being ~ 0.2 nm. Thin TiN films deposited on freshly cleaved NaCl were found to be epitaxial at substrate temperatures as low as 50°C. Epitaxy in this latter system is believed to be due to the structural similarity between film and substrate and the almost exact 4:3 coincident site lattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 103
Copyright
Copyright © Materials Research Society 1995

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