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Pulsed Laser Planarization of Metals for IC Interconnect

Published online by Cambridge University Press:  25 February 2011

Robert J. Baseman
Affiliation:
IBM Research Division, IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Tung-Sheng Kuan
Affiliation:
IBM Research Division, IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
M. Osama Aboelfotoh
Affiliation:
IBM Research Division, IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Joseph C. Andreshak
Affiliation:
IBM Research Division, IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Frank E. Turene
Affiliation:
IBM General Technology Division, Hopewell Junction, NY 12533
Rosemary A. Previti-Kelly
Affiliation:
IBM General Technology Division, Essex Junction, VT 05452
James G. Ryan
Affiliation:
IBM Research Division, IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

We consider the feasibility of using an excimer laser to planarize copper deposited over polyimide. Even though the polyimide is thermally sensitive, a 2.8 µn thick copper film, deposited over polyimide, was planarized with 248 nm, 25 ns, laser fluences from 1.7 to 2.6 J/cm2. Although planar surfaces were readily produced, a variety of defects were observed in the underlying structures. The defects observed include stress induced fractures of the interconnect structure, polyimide surface roughening, and changes in the electrical characteristics of the polyimide. We also describe cross sectional TEM images of cavities formed in interlayer contacts during laser planarization that support recent descriptions of the surface tension driven flow.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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