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Pulsed Laser Induced Recrystallization of Amorphous Si

Published online by Cambridge University Press:  17 March 2011

Sebastiano Tosto
Sebastiano Tosto*
Affiliation:
ENEA Casaccia, via Anguillarese 301, 00060 Roma, Italy, e-mail: tosto@casaccia.enea.it
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Abstract

The paper introduces a 3D model to simulate the recrystallization microstructure of amorphous Si induced by pulsed laser irradiation. The computer simulation shows how the microstructure is modified when introducing into the model the assumption of rapid solidification quenching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F14.31.1
Copyright
Copyright © Materials Research Society 2001

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References

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