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Pulsed Laser Deposition of BaxSr1-xTiO3 Thin Films for Frequency Agile Microwave Electronics

Published online by Cambridge University Press:  15 February 2011

W. Chang
Affiliation:
Naval Research Laboratory, Code 6670, 4555 Overlook Ave., SW, Washington, DC 20375
J. S. Horwitz
Affiliation:
Naval Research Laboratory, Code 6670, 4555 Overlook Ave., SW, Washington, DC 20375
J. M. Pond
Affiliation:
Naval Research Laboratory, Code 6670, 4555 Overlook Ave., SW, Washington, DC 20375
S. W. Kirchoefer
Affiliation:
Naval Research Laboratory, Code 6670, 4555 Overlook Ave., SW, Washington, DC 20375
D B. Chrisey
Affiliation:
Naval Research Laboratory, Code 6670, 4555 Overlook Ave., SW, Washington, DC 20375
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Abstract

Oriented, single phase thin films (~5000Å thick) of BaxSr1-xTiO3 (BST) have been deposited on to (100) MgO and LaAlO3 (LAO) single crystal substrates using pulsed laser deposition (PLD). A strong correlation is observed between the microstructure of the deposited film and the dielectric tuning and loss at microwave frequencies. Microstructural defects observed in as deposited films include strain, due to film substrate lattice mismatch and oxygen and cation vacancies. Compensation of the ablation target with excess Ba and Sr is observed to increase the dielectric constant and to reduce the dielectric loss. Post-deposition, bomb annealing of films at high temperatures (1250°C) is observed to fill oxygen vacancies and increase grain size. The difference in the dielectric behavior for as-deposited and low temperature annealed BST films on MgO and BST films on LAO is observed and may be attributed to the differences in film stress. A further improvement in the dielectric behavior is observed by the addition of donor/acceptor dopants such as Mn. The data shows that ferroelectric thin films can be used to build tunable microwave circuits that offer significant performance advantages over devices made from conventional semiconducting materials.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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