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Pulsed Laser Annealing of Silicon-Germanium Films

Published online by Cambridge University Press:  11 February 2011

Sherif Sedky ,
Jeremy Schroeder ,
Timothy Sands ,
Roger Howe  and
Tsu-Jae King
Sherif Sedky
Affiliation:
Physics Department, The American University in Cairo, P.O. Box 2511 Cairo, Egypt
Jeremy Schroeder
Affiliation:
Department of Materials Science & Engineering, University of California, Berkeley
Timothy Sands
Affiliation:
Department of Materials Science & Engineering, University of California, Berkeley
Roger Howe
Affiliation:
Berkeley Sensor & Actuator Center, University of California, Berkeley Department of Electrical Engineering and Computer Science, University of California, Berkeley
Tsu-Jae King
Affiliation:
Department of Electrical Engineering and Computer Science, University of California, Berkeley
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Abstract

In this work, we investigate the possibility of using pulsed laser annealing to locally tailor the physical properties of Si1-xGex (18% < × < 90%) prepared by low pressure chemical vapor deposition (LPCVD) at 400°C. Films which were amorphous as deposited showed, after laser annealing, strong {111} texture and a columnar grain microstructure and an average resistivity of 0.7 mΩ.cm. AFM showed that the first few laser pulses result in a noticeable reduction in surface roughness, which is proportional to the pulse energy. However, a large number of successive pulses dramatically increases the surface roughness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 741: Symposium J – Nano- and Microelectromechanical Systems (NEMS and MEMS) and Molecular Machines , 2002 , J4.2
Copyright
Copyright © Materials Research Society 2003

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References

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