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Pulsed Laser Annealing of R.F.Sputtered Amorphous Si : H.Films, Doped with Arsenic+

Published online by Cambridge University Press:  15 February 2011

E. Fogarassy ,
R. Stuck ,
M. Toulemonde ,
P. Siffert ,
J.F. Morhange  and
M. Balkanski
E. Fogarassy
Affiliation:
Groupe de Physique et Applications des Semiconducteurs, Centre de Recherches Nucléaires, 67037 STRASBOURG Cedex, FRANCE
R. Stuck
Affiliation:
Groupe de Physique et Applications des Semiconducteurs, Centre de Recherches Nucléaires, 67037 STRASBOURG Cedex, FRANCE
M. Toulemonde
Affiliation:
Groupe de Physique et Applications des Semiconducteurs, Centre de Recherches Nucléaires, 67037 STRASBOURG Cedex, FRANCE
P. Siffert
Affiliation:
Groupe de Physique et Applications des Semiconducteurs, Centre de Recherches Nucléaires, 67037 STRASBOURG Cedex, FRANCE
J.F. Morhange
Affiliation:
Groupe de Physique et Applications des Semiconducteurs, Centre de Recherches Nucléaires, 67037 STRASBOURG Cedex, FRANCE
M. Balkanski
Affiliation:
Groupe de Physique et Applications des Semiconducteurs, Centre de Recherches Nucléaires, 67037 STRASBOURG Cedex, FRANCE
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Abstract

Arsenic doped amorphous silicon layers have been deposited on silicon single crystals by R.F.cathodic sputtering of a silicon target in a reactive argon-hydrogen mixture, and annealed with a Q-switched Ruby laser. Topographic analysis of the irradiated layers has shown the formation of a crater, due to an evaporation effect of material which could be related to the presence of a high concentration of Ar in the amorphous layer. RBS and Raman Spectroscopy showed that the remaining layer is not recrystallised probably due to inhibition by the residual hydrogen. However, it was found that arsenic diffuses into the monocrystalline substrate by laser induced diffusion of dopant from the surface solid source, leading to the formation of good quality P-N junctions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 553
Copyright
Copyright © Materials Research Society 1982

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Footnotes

+

work performed under COMES and PIRDES contract.

References

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