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Pt/Ti Low Resistance Non-Alloyed Ohmic Contacts to InP-Based Photonic Devices

Published online by Cambridge University Press:  25 February 2011

A. Katz ,
S. N. G. Chu ,
P. M. Thomas  and
W. C. Dautremont-Smith
A. Katz
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
S. N. G. Chu
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
P. M. Thomas
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
W. C. Dautremont-Smith
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Pt/ri low resistance non-alloyed ohmic contacts to p-InP-based contact layers in photonic devices, which were formed by rapid thermal processing (RTP), were studied. E-gun evaporated Pt/Ti metallization deposited onto 1.5· 1019 cm−3 Zn doped In0.53Ga0.47 As yielded the best electrical performance. These contacts were ohmic as deposited with a specific contact resistance value of 3.0 · 10−4 Ωcm2. RTP at higher temperatures led to decrease of the specific contact resistance to 3.4 · 10−8 Ωcm2 (0.08Ωmm) as a result of heating at 450°C for 30 sec. This heat treatment caused only a limited interfacial reaction (about 20 nm thick) between the Ti and the InGaAs, resulted in a thermally stable contact and induced tensile stress of 5.6 · 109 dyne · cm−2 at the metal layer but without degrading the adhesion. Heating at temperatures higher than 500°C resulted in an extensive interaction and degradation of the contact.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 405
Copyright
Copyright © Materials Research Society 1989

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References

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