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Properties of Thin Inter-Polysilicon Reoxidized Nitrided Oxides Prepared by Rapid Thermal Processing (RTO/RTN/RTO)

Published online by Cambridge University Press:  25 February 2011

Andrew W. Cheung ,
G. Q. Lo ,
Dim-Lee Kwong ,
N. S. Alvi  and
A. Kermani
Andrew W. Cheung
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712
G. Q. Lo
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712
Dim-Lee Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712
N. S. Alvi
Affiliation:
Delco Electronics Corporation, Kokomo, Indiana 46902
A. Kermani
Affiliation:
Peak Systems, Fremont, California
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Abstract

In the search of a high quality thin inter-polysilicon dielectric which has high breakdown voltage and low leakage current for high density non-volatile memory applications, thin (150±) inter-polysilicon reoxidized nitrided oxide capacitors were fabricated with multiple rapid thermal processing. While rapid thermal nitridation degraded the breakdown field if compared to the rapid thermal oxide capacitors, rapid thermal reoxidation greatly enhanced the dielectric strength of the rapid thermal nitrided samples. The short reoxidations increased the film thickness by less than 10 \. Breakdown field of optimized inter-polysilicon RTO/RTN/RTO capacitors up to 14 MV/cm has been measured.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 483
Copyright
Copyright © Materials Research Society 1989

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References

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