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Properties of SiO2 Films Fabricated by Microwave ECR Plasma Processing with and without Energetic Particle Bombardment During Film Deposition. Part II: Electronic Properties

Published online by Cambridge University Press:  15 February 2011

T. T Chau ,
S. R. Mejia  and
K. C. Kao
T. T Chau
Affiliation:
Materials and Devices Research Laboratory, Department of Electrical and Computer Engineering, University of Manitoba, Winnipeg, Manitoba, Canada, R3T 2N2.
S. R. Mejia
Affiliation:
Materials and Devices Research Laboratory, Department of Electrical and Computer Engineering, University of Manitoba, Winnipeg, Manitoba, Canada, R3T 2N2.
K. C. Kao
Affiliation:
Materials and Devices Research Laboratory, Department of Electrical and Computer Engineering, University of Manitoba, Winnipeg, Manitoba, Canada, R3T 2N2.
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Abstract

Silicon dioxide (SiO2) films were fabricated by microwave ECR plasma processing at 300°C, the range of the film thicknesses being 200 - 300 Å. Two groups of films were fabricated; group A with the substrates placed in a position directly facing the plasma so that the substrates as well as the on-growing films were subjected to bombardment of energetic particles produced in the plasma, and group B with the substrates placed in a processing chamber physically separated from the plasma chamber in order to prevent or suppress the damaging effects resulting from these energetic particle bombardment. It has been found that group A films are poor in both the capacitance-voltage (C-V) and the current-voltage (I-V) characteristics, possibly due to dust particles created by the gas phase reaction of SiH4 and ionic bombardment and radiation damage during film deposition. Group B films, on the other hands, exhibit good electronic properties. On the basis of their I-V and C-V characteristics, group B films yield an average breakdown strength of about 10 MV/cm, an oxide bulk charge density on the order of 1014 q/cm3 and an interface trap density on the order of 1011 cm−2 eV−1 which are approaching those of high quality thermally grown oxides and they are suitable for use as gate insulator for MOS devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 277
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1 Fountain, G. G., Rudder, R. A., Hattangady, S. V., Markunas, R. J., and Lindorme, P. S., J. Appl. Phys. 63, 4744 (1988).Google Scholar
2 Batey, J., Tierney, E., and Nguyen, T. N., IEEE Electron. Dev. Lett., EDL 8, 148 (1987).Google Scholar
3 Robinson, B., N.Nguyen, T., and Copel, M. in Deposition and Growth Limits for Microelectronics, edited by Rubloff, G. W. (AIP, pro. 167, CA, 1987), pp-112–123.Google Scholar
4 Chau, T. T., Mejia, S. R., and Kao, K. C., Electro. Lett. 25, 1088 (1989).Google Scholar
5 Chau, T. T., Mejia, S. R., and Kao, K. C., Canadian patent pending No 2,029,518–0 (08–11–1990).Google Scholar
6 Chau, T. T., Mejia, S. R., and Kao, K. C., presented at the MRS meeting in may 1991.Google Scholar
7 Chau, T. T., Mejia, S. R., and Kao, K. C., J. Vac. Sci. Technol. B90), 50 (1981).Google Scholar
8 Kassabov, J., Atanassova, E., Dimitrov, D., and Goranova, E., Microelectro. J. 18, 21 (1987).Google Scholar
9 Hwu, J. G., Chuang, J. B., and Fu, S. L., Appl. Phys. A 48, 377–383 (1989).Google Scholar
10 Ip, B. K., Kao, K. C., and Thomson, D. J., Solid State Electro. 34, 123 (1991).Google Scholar