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Properties of Silicon-on-Defect-Layer Material

Published online by Cambridge University Press:  21 February 2011

Jianming Li ,
K. W. Jones ,
J. H. Coleman ,
J. Yi ,
R. Wallace  and
W. A. Anderson
Jianming Li
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973–5000
K. W. Jones
Affiliation:
Plasma Physics Corporation, P.O.Box 548, Locust Valley, NY 11560
J. H. Coleman
Affiliation:
University at Buffalo, State University of New York, Buffalo NY 14260–1900
J. Yi
Affiliation:
Currently at Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R.China.
R. Wallace
Affiliation:
Currently at Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R.China.
W. A. Anderson
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973–5000
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Abstract

A new silicon material, silicon-on-defect-layer (SODL), has been measured by secondary ion mass spectrometry (SIMS) and spreading resistivity (SR) measurements. SIMS data show that the buried defect-layer in SODL consists of silicon oxide due to the gettering of intrinsic oxygen by proton-implanted damage. Furthermore, SODL procedure makes a silicon wafer contain much fewer oxygen in surface-layer on the defect-layer, resulting in a purfied surface-layer. Measurements of SR indicate that the surface-layer of n-type silicon wafer was converted to p-type silicon after SODL procedure. A metal oxide semiconductor (MOS) device with a value of the electron mobility in the inversion mode of 714 cm2/(V s) was fabricated on SODL material. Like isolation function of a well in a complementary MOS (CMOS) device, the p-n junction in SODL material could play a role of isolation between the surface-layer and bulk. In addition, by reducing the implantation energy, SODL technology for making p-n junction, in which built-in field separates light-generated electrons and holes, is a candidate to make cheap solar cells by using low-quality low-cost silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 745
Copyright
Copyright © Materials Research Society 1996

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