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Properties of Silicon Nitride Films Prepared by Combination of Catalytic-Nitridation and Catalytic-Cvd

Published online by Cambridge University Press:  01 February 2011

A. Izumi ,
A. Kikkawa ,
K. Higashimine  and
H. Matsumura
A. Izumi
Affiliation:
Kyushu Institute of Technology Fukuoka 804-8550, JAPAN, izumi@ele.kyutech.ac.jp JAIST (Japan Advanced Institute of Science and Technology)Ishikawa 923-1292, JAPAN
A. Kikkawa
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology)Ishikawa 923-1292, JAPAN
K. Higashimine
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology)Ishikawa 923-1292, JAPAN
H. Matsumura
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology)Ishikawa 923-1292, JAPAN
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Abstract

This paper reports about the interface of silicon nitride (SiNx) formed on Si(100) prepared by combination of catalytic-nitridation and catalytic-vapor deposition method in a catalytic chemical vapor deposition system. It is found that flat interface of SiNx/Si(100) is formed by inserting nitridation layer before growing the SiNx films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A18.5
Copyright
Copyright © Materials Research Society 2003

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References

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