Hostname: page-component-77c89778f8-n9wrp Total loading time: 0 Render date: 2024-07-16T23:59:40.302Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Silicon Nitride Films Prepared by Combination of Catalytic-Nitridation and Catalytic-Cvd

Published online by Cambridge University Press:  01 February 2011

A. Izumi ,
A. Kikkawa ,
K. Higashimine  and
H. Matsumura
A. Izumi
Affiliation:
Kyushu Institute of Technology Fukuoka 804-8550, JAPAN, izumi@ele.kyutech.ac.jp JAIST (Japan Advanced Institute of Science and Technology)Ishikawa 923-1292, JAPAN
A. Kikkawa
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology)Ishikawa 923-1292, JAPAN
K. Higashimine
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology)Ishikawa 923-1292, JAPAN
H. Matsumura
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology)Ishikawa 923-1292, JAPAN
Get access

Abstract

This paper reports about the interface of silicon nitride (SiNx) formed on Si(100) prepared by combination of catalytic-nitridation and catalytic-vapor deposition method in a catalytic chemical vapor deposition system. It is found that flat interface of SiNx/Si(100) is formed by inserting nitridation layer before growing the SiNx films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A18.5
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Matsumura, H. and Tachibana, H., Appl. Phys. Lett 47, 833 (1985).Google Scholar
[2] Matsumura, H., Jpn. J. Appl. Phys. 28, 2157 (1989).Google Scholar
[3] Okada, S. and Matsumura, H., Jpn. J. Appl. Phys. 36, 7035 (1997).Google Scholar
[4] Izumi, A. and Matsumura, H., Appl. Phys. Lett. 71, 1371 (1997).Google Scholar
[5] Izumi, A., Kikkawa, A. and Matsumura, H., Mat. Res. Soc. Symp. 715, 491 (2002).Google Scholar
[6] Kikkawa, A., Morimoto, R., Izumi, A. and Matsumura, H., Thin Solid Films (2003) in press.Google Scholar
[7] Kern, W. and Poutinen, D. A., RCA Rev. 31, 187 (1970).Google Scholar