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Properties of Polysilicon films Oxidized in Inductively Coupled Plasma and its Effect on thin-Film Transistors

Published online by Cambridge University Press:  10 February 2011

Yong Woo Choi ,
Jin Hyung Ahn  and
Byung Tae Ahn
Yong Woo Choi
Affiliation:
Dept. of Materials Science & Engineering, Korea Advanced Institute of Science and Technology, 373-1 Koosung-dong, Yusung-gu, Taejon, 305-701, KOREA
Jin Hyung Ahn
Affiliation:
Dept. of Materials Science & Engineering, Korea Advanced Institute of Science and Technology, 373-1 Koosung-dong, Yusung-gu, Taejon, 305-701, KOREA
Byung Tae Ahn
Affiliation:
Dept. of Materials Science & Engineering, Korea Advanced Institute of Science and Technology, 373-1 Koosung-dong, Yusung-gu, Taejon, 305-701, KOREA E-mail: btahn@cais.kaist.ac.kr
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Abstract

We investigated the properties of polycrystalline silicon (poly-Si) films oxidized in inductively coupled plasma (ICP) and the characteristics of poly-Si thin film transistors (TFTs) with an ICP/LPCVD gate oxide. The ICP oxidation reduced the interface traps and passivated dangling bonds by hydrogen incorporation. The ICP oxidation did not change the roughness of the Si/SiO2, while thermal oxidation increased the roughness largely. The characteristics of the TFTs with ICP/LPCVD oxide were improved due to the reduced interface trap density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 205
Copyright
Copyright © Materials Research Society 2000

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References

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