Hostname: page-component-848d4c4894-x5gtn Total loading time: 0 Render date: 2024-05-02T11:48:31.429Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Oxide-Nitride-Oxide Stacked Films for Gate Insulation in Active Matrix Displays

Published online by Cambridge University Press:  22 February 2011

D. Waechter ,
T. Billard  and
P. Gogna
D. Waechter
Affiliation:
Litton Systems Canada Limited, 2 5 City View Drive, Etobicoke, Ontario, Canada, M9W 5A7
T. Billard
Affiliation:
Litton Systems Canada Limited, 2 5 City View Drive, Etobicoke, Ontario, Canada, M9W 5A7
Get access

Abstract

Oxide-nitride-oxide (ONO) stacked films deposited by plasma enhanced chemical vapor deposition (PECVD) have been studied for use as the gate dielectric in active matrix displays. Good electrical properties were obtained for cadmium selenide thin film transistors (TFTs) with either ONO or single layer SiO2 gate insulation. However, the dielectric strength was up to twice as large for the ONO films. This improvement was observed with both Al and Cr electrodes.

The individual oxide layers had compressive stress, while the individual nitride layers had tensile stress. When combined in an ONO structure, a net tensile stress of relatively low magnitude was obtained. Index of refraction and infrared absorption measurements indicated that the oxide films were oxygen deficient. Hydrogen incorporation was present for both the oxide and nitride films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 443
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Howard, W.E., Proc. SID, 22, 47 (1981).Google Scholar
2. Dobler, M., Lueder, E., Lauer, H. U. and Kallfass, T., SID Dig. 427 (1991).Google Scholar
3. Tay, S-P. and Ellul, J.P., J. Electron. Mat. 21, 45 (1992).Google Scholar
4. Lee, S-S., Lee, S-D., Hong, S-J., Kim, H-S. and Park, Y-J., Solid State Technol., Oct., 149 (1987).Google Scholar
5. Hiergeist, P., Spitzer, A. and Rohl, S., IEEE Trans. Electron Dev. 36, 913 (1989).Google Scholar
6. Fang, Y. K., Tsai, C. H., Chiang, C. P., Tseng, F.C. and Chien, J-R., Solid State Electron. 33, 1151 (1990).Google Scholar
7. Farrell, J., Westcott, M., Van Calster, A., De Baets, J., De Rycke, I., Capon, J., De Smet, H., Doutreloigne, J. and Vanfleteren, J., Microelectronic Engineering 19, 187 (1992).Google Scholar
8. Piccirillo, A. and Gobbi, A.L., J. Electrochem. Soc. 137, 3910 (1990).Google Scholar
9. Pliskin, W.A., J. Vac. Sci. Technol. 14, 1064 (1977).Google Scholar
10. Allman, D.D.J., Fuchs, K.P. and Cuchiaro, J.M., j. Vac. Sci. Technol. A, 9, 485 (1991).Google Scholar
11. Bensch, W. and Bergholz, W., Semicond. Sci. Technol. 5, 421 (1990).Google Scholar
12. Dharmadhikari, V.S., J. Vac. Sci. Technol. A6, 1922 (1988)Google Scholar
13. Budhani, R.C., Prakaski, S., Doerr, H.J. and Bunshah, R.F., J. Vac. Sci. Technol. A5, 1644 (1987).Google Scholar
14. Wolters, D.R. and Van der Schoot, J.J., Philips J. Res. 40, 115 (1985).Google Scholar