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The Properties of Low Hydrogen Silicon Thin Films Deposited by Mesh-type PECVD

Published online by Cambridge University Press:  17 March 2011

Se-Won Ryu ,
Do-Hyun Kwon ,
Sung-Gye Park  and
Hyoung-June Kim
Se-Won Ryu
Affiliation:
Dept. of Metallurgical Engineering and Material Science, Hong-Ik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
Do-Hyun Kwon
Affiliation:
Dept. of Metallurgical Engineering and Material Science, Hong-Ik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
Sung-Gye Park
Affiliation:
Dept. of Metallurgical Engineering and Material Science, Hong-Ik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
Hyoung-June Kim
Affiliation:
Dept. of Metallurgical Engineering and Material Science, Hong-Ik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
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Abstract

We propose a mesh-type PECVD to minimize the hydrogen concentration in this study. Since in this system deposition rate is very slow, so for increasing a deposition rate, we suggest an applied DC bias enhanced sputtering process. We investigated several conditions to compare with conventional PECVD. Excimer-laser melting and regrowth of thin a-Si films is for fabricating polycrystalline-Si (poly-Si). Furthermore, we fabricate poly-Si thin-film transistor(TFTs) and measure threshold voltage (V), field-effect mobility (cm2 /Vs) and on/off current ratio

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A5.8
Copyright
Copyright © Materials Research Society 2001

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References

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