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Properties of Ion Beam Synthesized Iron Disilicide Dots

Published online by Cambridge University Press:  10 February 2011

M. Galli ,
F. Marabelli ,
A. Pagetti ,
M.G. Grimaldi ,
S. Coffay ,
C. Spinella  and
L. Miglio
M. Galli
Affiliation:
INFM-Univ.of Pavia, Phys.Dept.“A.Volta”, Pavia, ITALY
F. Marabelli
Affiliation:
INFM-Univ.of Pavia, Phys.Dept.“A.Volta”, Pavia, ITALY
A. Pagetti
Affiliation:
INFM-Univ.of Pavia, Phys.Dept.“A.Volta”, Pavia, ITALY
M.G. Grimaldi
Affiliation:
INFM-Univ.of Catania, Phys.Dept., Catania, ITALY
S. Coffay
Affiliation:
CNR-IMETEM, Catania, ITALY
C. Spinella
Affiliation:
CNR-IMETEM, Catania, ITALY
L. Miglio
Affiliation:
INFM-Univ.of Milano, Mat.Science Dept., Milano, Italy.
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Abstract

Semiconducting iron silicide dots with dimensions ranging between 5 and 100 nm can be obtained by ion implantation on Si wafers and exhibit interesting photo- and electro- luminescent properties.

In our study we use structural and optical characterization as well as theoretical modelling in order to: i) discriminate among intrinsic effects of FeSi2 dots and effects due to lattice damage and Si matrix; ii) identify the range of physical parameters (size, phase, electronic structure) corresponding to the luminescent dots.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 287
Copyright
Copyright © Materials Research Society 2000

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References

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