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Properties of High Conductivity Phosphorous Doped Hydrogenated Microcrystalline Silicon and Application in Thin Film Transistor Technology

Published online by Cambridge University Press:  25 February 2011

J. Kanicki ,
E. Hasan ,
J. Griffith ,
T. Takamori  and
J. C. Tsang
J. Kanicki
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
E. Hasan
Affiliation:
Department of Materials Science and Engineering, MIT, Cambridge, MA 02139
J. Griffith
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
T. Takamori
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
J. C. Tsang
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
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Abstract

Device quality phosphorous (P) doped hydrogenated microcrystalline silicon (n+μc - Si:H) has been prepared by using the plasma enhanced chemical vapor deposition technique. The dependence of physical, chemical, structural and electrical properties on substrate temperature have been investigated. Conductivities for thick films up to 12 Ω−lcm−1 and 40 Ω−1cm−1 have been achieved for layers deposited at 300°C and 500°C, respectively. For films 50 nm thick deposited at 300°C a conductivity of about 5 Ω−1cm−1 has been obtained. A maximum average grain size around 30 nm was obtained. The etch rates of P-doped microcrystalline silicon have been found to be between 8 and 10 times higher than that of undoped hydrogenated amorphous silicon (a-Si:H) films deposited at the same temperature. Thin film transistors incorporating heavily P-doped amorphous and microcrystalline layer between source/drain metal and the a-Si:H channel have been fabricated. We show that an n+μc - Si:H source/drain contacts in thin film transistors provides very good characteristics, yielding an average effective field effect mobility, threshold voltage, and on/off current ratio of about 0.9cm2V−1 sec−1, below 4 V, and above 107, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 239
Copyright
Copyright © Materials Research Society 1989

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References

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