Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-26T15:47:09.386Z Has data issue: false hasContentIssue false
  • English
  • Français

The Properties of Ferroelectric Domain of PLT Thin Films Prepared by RF Magnetron Sputtering

Published online by Cambridge University Press:  26 February 2011

Hong Liu ,
Zhaohui Pu ,
Zhihong Wang ,
Huidong Huang ,
Yanrong Li ,
Dingquan Xiao  and
Jianguo Zhu
Hong Liu
Affiliation:
nic0400@scu.edu.cn, Sichuan University, Department of Materials Science, China, People's Republic of
Zhaohui Pu
Affiliation:
nic0400@scu.edu.cn, Sichuan University, Department of Materials Science, China, People's Republic of
Zhihong Wang
Affiliation:
nic0400@scu.edu.cn, University of electronics science and technology of China, School of microelectronics and solid-state electronics, China, People's Republic of
Huidong Huang
Affiliation:
nic0400@scu.edu.cn, University of electronics science and technology of China, School of microelectronics and solid-state electronics, China, People's Republic of
Yanrong Li
Affiliation:
nic0400@scu.edu.cn, University of electronics science and technology of China, School of microelectronics and solid-state electronics, China, People's Republic of
Dingquan Xiao
Affiliation:
nic0402@scu.edu.cn, Sichuan University, Department of Materials Science, China, People's Republic of
Jianguo Zhu
Affiliation:
nic0400@scu.edu.cn, Sichuan University, Department of Materials Science, China, People's Republic of
Get access

Abstract

Lanthanum-modified lead titanate (PLT) ferroelectric thin films were fabricated by the RF magnetron sputtering system on Pt/Ti/SiO2/Si(100) substrates. The x-ray diffraction (XRD) patterns of the PLT films showed that the pure perovskite structure was formed in the PLT thin films. The Piezoresponse Force Microscopy (PFM) was used for determining the domain structure of these films. It was found that the 90 degree domain was the main domain structure of PLT thin films. It was found that the PLT films prepared by RF sputtering have relatively large pyroelectric coefficient γ=2.20×10-8C·(cm2·K)-1 and relatively high figures of merit for current responsivity, voltage responsivity and specific detectivity.

Keywords

ferroelectricfilmsputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T03-35
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Lee, S. J., Kang, A. K. Y., Han, S. K., Jang, M. S., Chae, B. G., Yang, Y. S., Kim, S. H., Applied Physics Letters, 72, 299–301 (1998).Google Scholar
2 Bune, A. V., Fridkin, V. M., Ducharme, S., Blinov, L. M., Palto, S. P., Sorokin, A.V., Yudin, S. G., Zlatkin, A., Nature, 391, 874–877 (1998).Google Scholar
3 Kim, H. H., Sohn, K. S., Casas, L. M., Pfeffer, R. L., and Lareau, R. T., Journal of the Electrochemical Society, 142, 1640–1643 (1995).Google Scholar
4 Okazaki, K., Maiwa, H., and Ichinose, N., Electroceramics IV 1, 335–338 (1994).Google Scholar
5 Bhaskar, S., Majumder, S. B., Fachini, E. R., and Katiyar, R. S., Journal of the American Ceramic Society, 87, 384–390 (2004).Google Scholar
6 Tominaga, K., Miyajima, M., Sakashita, Y., Segawa, H., and Okada, M., Japanese Journal of Applied Physics, Part 2 (Letters), 29, 1874–1876 (1990).Google Scholar
7 Calzada, M. L., Bretos, I., Jimenez, R., Guillon, H., and Pardo, L., Advanced Materials, 16, 1620–1624 (2004).Google Scholar
8 Fan, H., Mater. Sci. Eng. B 120, 114–118 (2005).Google Scholar
9 Chou, C. C., Chen, Ch. S., Ceramics International, 26, 693–697 (2000).Google Scholar
10 Castellanos-Guzman, A. G., Trujillo-Torrez, M., Czank, M., Mater. Sci. Eng. B, 120, 59–63 (2005).Google Scholar
11 Miller, P. B., Phys. Rev., 111, 736 (1958).Google Scholar
12 Sawoda, A., Abe, R, Jan. J. Appl. Phys., 6, 699 (1967).Google Scholar
13 Arlt, G., J. Mater. Sci., 25, 2655–2666 (1990).Google Scholar
14 Arlt, G., Hennings, D., and with, G. ge, J. Appl. Phys., 58, 1619–1625 (1985).Google Scholar
15 Kim, S. B., Chung, T. J., and Kim, D.Y., J. Eur. Ceram. Soc., 12, 147–151 (1993).Google Scholar
16 Chung, S. W., Kim, Y. I., Park, H. L., and Lee, W. J., Journal of Materials Science: Materials In Electronics, 9, 383–390 (1998).Google Scholar
17 Zhang, Q., and Whatmore, R. W., Journal of Applied Physics, 94, 5228–5233 (2003).Google Scholar
18 Tipton, C. W., Kirchner, K., Godfrey, R., Cardenas, M., Aggarwal, S., Li, H. and Ramesh, R., Appl. Phys. Lett., 77, 2388–2390 (2000).Google Scholar
19 Kang, D. H., Kim, K. W., Lee, S. Y., Kim, Y. H. and Gil, S. K., Materials Chemistry and Physics, 90, 411–416 (2005).Google Scholar
20 Poyato, R., Gonzalez, A., Calzada, M. L., Pardo, L., Ferroelectrics, 271, 1975–1980 (2002).Google Scholar