Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-06-19T00:21:35.329Z Has data issue: false hasContentIssue false
  • English
  • Français

The Properties of a P-Implanted GaN Light-Emitting Diode

Published online by Cambridge University Press:  11 February 2011

J. Kikawa ,
S. Yoshida  and
Y. Itoh
J. Kikawa
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. 2–4–3, Okano, Nishi-ku, Yokohama, 220–0073, Japan
S. Yoshida
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. 2–4–3, Okano, Nishi-ku, Yokohama, 220–0073, Japan
Y. Itoh
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. 2–4–3, Okano, Nishi-ku, Yokohama, 220–0073, Japan
Get access

Abstract

Electroluminescence measurements of P-implanted GaN light-emitting diodes were performed. The measured peak densities of P in the GaN were 5×10 cm−3 and 4×10 cm−3 based on secondary ion mass spectroscopy. The EL spectra had a broad blue-band emission at the peak energy from around 2.8 eV to 3.3 eV and yellow-band emission at an energy centered at 2.2 eV. The blue-band emission could decompose into two components at energy positions of 2.9 eV and 3.2 eV. The former component is considered to be emission due to the recombination of the bounding exciton by P atoms, known as an isoelectronic trap in GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L6.20
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Iwata, K., Asahi, H., Asami, K., Kuroiwa, R., and Gonda, S., Jpn. Appl. 37, 1436 (1998).Google Scholar
2. Kikawa, J., Yoshida, S., and Itoh, Y., Proc. Int′l Workshop on Nitride Semicon. IPAP Conf. Ser. 1, 429 (2000) Dec.Google Scholar
3. Li, X., kin, S., Reuter, E.E., Bishop, S.G., and Coleman, J.J., Appl. Phys. Lett. 72, 1990 (1998).Google Scholar
4. Winser, A. J., Novikov, S. V., Davis, C. S., Cheng, T. S., and Foxon, C. T., Appl. Phys. Lett. 77, 2506 (2000).Google Scholar
5. Pankove, J. I. and Hutchby, J. A., J. Appl. Phys., 47, 5387 (1976).Google Scholar
6. Jadwisienzak, W. M. and lozykowski, H. J, Mat. Res. Soc. Symp. Proc. 482, 1033 (1998).Google Scholar
7. Kikawa, J., Itoh, Y., and Yoshida, S., Mat. Res. Soc. Symp. Proc. Vol. 693, 213 (2002).Google Scholar