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The Promotion of Silicide Formation using a Scanned Silicon Ion Beam

Published online by Cambridge University Press:  26 February 2011

E. J. Williams ,
E. G. Bithell ,
C. B. Boothroyd ,
W. M. Stobbs ,
R. J. Young  and
J. R. A. Cleaver
E. J. Williams
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, U.K.
E. G. Bithell
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, U.K.
C. B. Boothroyd
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, U.K.
W. M. Stobbs
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, U.K.
R. J. Young
Affiliation:
University of Cambridge, Microelectronics Research Laboratory, Department of Physics, Milton Road, Cambridge, CB4 4FW, U.K.
J. R. A. Cleaver
Affiliation:
University of Cambridge, Microelectronics Research Laboratory, Department of Physics, Milton Road, Cambridge, CB4 4FW, U.K.
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Abstract

The promotion of silicide reactions at the interface between silicon and a metal overlayer is described, the reactions being initiated by scanned ion beams. The relative effects of low and high energy Si+ and Si2+ beams are discussed and the results of subsequent annealing are compared with those seen when using low energy (5keV) argon ion beams. The implications for the writing of metallisation lines are also noted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 287
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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