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Progressive Debonding of Multilayer Interconnect Structures

Published online by Cambridge University Press:  10 February 2011

Michael Lane ,
Robert Ware ,
Steven Voss ,
Qing Ma ,
Harry Fujimoto  and
Reinhold H. Dauskardt
Michael Lane
Affiliation:
Department of Materials Science and Engineering, Stanford University, CA 94305
Robert Ware
Affiliation:
Department of Materials Science and Engineering, Stanford University, CA 94305
Steven Voss
Affiliation:
Department of Materials Science and Engineering, Stanford University, CA 94305
Qing Ma
Affiliation:
Intel Corp., Santa Clara, CA
Harry Fujimoto
Affiliation:
Intel Corp., Santa Clara, CA
Reinhold H. Dauskardt
Affiliation:
Department of Materials Science and Engineering, Stanford University, CA 94305
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Abstract

Progressive (or time dependent) debonding of interfaces poses serious problems in interconnect structures involving multilayer thin films stacks. The existence of such subcriticai debonding associated with environmentally assisted crack-growth processes is examined for a TiN/SiO2 interface commonly encountered in interconnect structures. The rate of debond extension is found to be sensitive to the mechanical driving force as well as the interface morphology, chemistry, and yielding of adjacent ductile layers. In order to investigate the effect of interconnect structure, particularly the effect of an adjacent ductile Al-Cu layer, on subcriticai debonding along the TiN/SiO2 interface, a set of samples was prepared with Al-Cu layer thicknesses varying from 0.2–4.0 μm. All other processing conditions remained the same over the entire sample run. Results showed that for a given crack growth velocity, the debond driving force scaled with Al-Cu layer thickness. Normalizing the data by the critical adhesion energy allowed a universal subcriticai debond rate curve to be derived.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 21
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Ma, Q., Fujimoto, H., Flinn, P., Jain, V., Adibi-Rizi, F., Moghadam, F. and Dauskardt, R.H., in Materials Reliability in Microelectronics V, ed. Oates, A.S. et al. (Mater. Res. Soc. Symp. Proc, 391, Pittsburgh, PA, 1995) pp. 91–96.Google Scholar
[2] Ma, Q., Bumgamer, J., Fujimoto, H., Lane, M. and Dauskardt, R., “Adhesion Measurement of Interfaces in Multilayer Interconnect Structures”, to appear in these proceedings.Google Scholar
[3] Wiederhom, S.M., J. Am. Ceram. Soc. 50, 407 (1967).Google Scholar
[4] Michalske, T.A. and Freiman, S.W., J. Am. Ceram. Soc. 66, 284 (1983).Google Scholar
[5] Charles, R.J. and Hillig, W.B., in Symp. on Mechanical Strength of Glass and Ways of Improving It (Union Scientifique Continentale du Verre, Belgium, 1962), p. 682.Google Scholar
[6] Hillig, W.B. and Charles, R.J., in High Strength Materials, ed. Zackay, V.F. (Wiley, NY, 1965), p. 682.Google Scholar
[7] Wiederhom, S.M., Freiman, S.W., Fuller, E.R. and Simmons, C.J., J. Mat. Sci. 17, 3460 (1982).Google Scholar
[8] Wiederhom, S.M., in Fracture Mechanics of Ceramics, Vol. 4, ed. Bradt, R.C. et al. (Plenum Press, NY, 1978), p. 549.Google Scholar
[9] Rice, J.R. and Sih, G.C., J. Appl. Mech. 32, 418 (1965).Google Scholar
[10] Ma, Q., “A Four-Point Bending Technique for Studying Subcriticai Crack Growth in Thin Films and at Interfaces”, J. Materials Research, 12, 840–845, 1997.Google Scholar
[11] Dauskardt, R.H., Marshall, D.B. and Ritchie, R.O., J. Am. Ceram. Soc. 73 [4] 893–903 (1990).Google Scholar