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Progress on 850 nm Flip Chip Bondable VCSEL for Optical Interconnects
Published online by Cambridge University Press: 10 February 2011
Abstract
We report here efforts to advance 850 nm VCSELs designed specifically for integration to Si- CMOS. Our VCSEL design is based on an oxidized current aperture and oxidized top mirror with the intent that the device operate as a bottom emitter after integration. Our design also employs intercavity contacts and the first non-alloyed buried contact have been realized. The devices produce resonantly enhanced light emission with record output of 70 μW/st.rad.
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- Copyright © Materials Research Society 1998
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