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The Programmability of Amorphous Silicon Analogue Memory Elements

Published online by Cambridge University Press:  25 February 2011

J. Hajto ,
M. J. Rose ,
A. J. Snell ,
P. G. LeComber  and
A. E. Owen
J. Hajto
Affiliation:
Department of Electrical Engineering, University of Edinburgh, EH9 3JL, Scotland
M. J. Rose
Affiliation:
Department of Applied Physics and Electronic & Manufacturing Engineering, University of Dundee, DD1 4HN, Scotland
A. J. Snell
Affiliation:
Department of Electrical Engineering, University of Edinburgh, EH9 3JL, Scotland
P. G. LeComber
Affiliation:
Department of Applied Physics and Electronic & Manufacturing Engineering, University of Dundee, DD1 4HN, Scotland
A. E. Owen
Affiliation:
Department of Electrical Engineering, University of Edinburgh, EH9 3JL, Scotland
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Abstract

This paper outlines recent results from work on non-volatile, analogue switching effects in amorphous silicon devices. The implication for the switching mechanism of these results and also the technological applications of such analogue devices are discussed. Particular reference is made to their use as re-programmable, non-volatile weighting elements in neural network synapses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 405
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

Gage, S.M., Hajto, J., Reynolds, S., Choi, W.K., Rose, M.J., LeComber, P.G., Snell, A.J. and Owen, A.E., J. Non-Cryst. Sol., 77/78 1373 (1985)Google Scholar
Rose, M.J., Hajto, J., LeComber, P.G., Gage, S.M., Choi, W.K., Snell, A.J., and Owen, A.E., J. Non-Cryst. Sol., 115 168 (1989)Google Scholar
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