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Profiling electric fields around dislocations in GaN

Published online by Cambridge University Press:  21 March 2011

D. Cherns ,
C.G. Jiao  and
H. Mokhtari
D. Cherns
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K.
C.G. Jiao
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K.
H. Mokhtari
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K.
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Abstract

Electron holography has been used to measure the electric potential around edge and screw dislocations in n-GaN viewed in a near end-on geometry. It is shown that the potential at edge dislocations is 2V below that in the bulk consistent with a negative charge of 2 electrons/c (c = 0.52nm). Preliminary results, which suggest that screw dislocations are also negatively charged, are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I10.2.1
Copyright
Copyright © Materials Research Society 2002

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