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Production of GaAs and InP Based Heterostructures

Published online by Cambridge University Press:  28 February 2011

H. Jorgensen ,
R. K. Schreiner  and
M. Deschler
H. Jorgensen
Affiliation:
AIXTRON GmbH, Jülicher Straße 336-338, 5100 Aachen, FRG
R. K. Schreiner
Affiliation:
AIXTRON GmbH, Jülicher Straße 336-338, 5100 Aachen, FRG
M. Deschler
Affiliation:
AIXTRON GmbH, Jülicher Straße 336-338, 5100 Aachen, FRG
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Abstract

The complete requested range of epitaxial deposition from one monolayer to tens of microns is available integrating LP-MOVPE and LP-VPE into wafer fabrication. Uniformity across 2 inch wafers for thickness, composition, and doping show a variation of less than 2 %. Electrical properties of the 1014 cm−3range and less for background doping, carrier mobilities of 210,000 cm2/Vs for AIGaAs and 190,000 cm2/Vs for GalnAs, both HEMT structures, are achieved. FWHM of 3.4 meV and 18.6 meV for 10 nm and 2 nm GaInAsP wells have been measured. GaAsP layers including a “graded” layer reveal FWHM of 15 nm. A new model for the understanding of high growth rates in the hydride system is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 137
Copyright
Copyright © Materials Research Society 1989

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