Article contents
Process-Induced Deformations and Stacking Faults in 4H-SiC
Published online by Cambridge University Press: 01 February 2011
Abstract
We used Film Stress Measurement (FSM), Transmission Electron Microscopy (TEM), and High-Resolution X-ray Diffraction (HRXRD) techniques to obtain further knowledge with respect to the deformation, warpage, and stacking faults (SF's) that are induced in n-type 4H-SiC wafers and epilayers when subjected to mechanical polishing and high temperature (1150 oC) processing.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2006
References
- 4
- Cited by