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Probing the Orbital Levels of Engineered Fullerenic Molecules from a Nonvolatile Memory Cell

Published online by Cambridge University Press:  02 March 2011

Sarah Q. Xu ,
Jonathan Shaw  and
Edwin C. Kan
Sarah Q. Xu
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.
Jonathan Shaw
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.
Edwin C. Kan
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.
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Abstract

The Coulomb blockade behavior was observed for both C60-PCBM and C70-PCBM at room temperature utilizing a nonvolatile memory cell fabricated through a liquid-transfer process. Room-temperature and low-temperature (10K) electrical characterizations verified the blockade effect was originated from both molecular energy levels and single electron charging energy. Molecular orbital energy was extracted and shown good agreement with the literature [1].The successful integration and operation of this hybrid structure signified a strong potential for molecule-based electronic device design.

Keywords

electronic structurenanostructureorganic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1286: Symposium E – Molecular and Hybrid Materials for Electronics and Photonics , 2011 , mrsf10-1286-e08-29
Copyright
Copyright © Materials Research Society 2011

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References

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