Hostname: page-component-77c89778f8-gq7q9 Total loading time: 0 Render date: 2024-07-19T02:10:44.212Z Has data issue: false hasContentIssue false
  • English
  • Français

Probing the Dead Layer in Barium Strontium Titanate Capacitors Made by Pulsed Laser Deposition

Published online by Cambridge University Press:  17 March 2011

L. J. Sinnamon ,
R. M. Bowman  and
J. M. Gregg
L. J. Sinnamon
Affiliation:
Department of Pure and Applied Physics The Queen's University of Belfast Belfast BT7 1NN, U. K
R. M. Bowman
Affiliation:
Department of Pure and Applied Physics The Queen's University of Belfast Belfast BT7 1NN, U. K
J. M. Gregg
Affiliation:
Department of Pure and Applied Physics The Queen's University of Belfast Belfast BT7 1NN, U. K
Get access

Abstract

Thin film capacitors with structures Au/Ba0.5Sr0.5TiO3/SrRuO3 were fabricated by pulsed laser deposition onto {001}-oriented MgO single crystal substrates. As part of an overall programme to investigate the so-called ‘dead-layer’ effect, polarisation loops were taken from the capacitors and analysed as a function of BST film thickness. Analysis was done within a Landau-Ginzburg-Devonshire (LGD) framework, and showed that for film thickness greater than ∼100nm, changes in the dielectric behaviour of the BST were dominated more by epitaxial mismatch strain, than by the conventional notion of the dead-layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C13.6.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Basceri, C., Streiffer, S. K., Kingon, A. I., Waser, R., J. Appl. Phys. 82, 2497 (1997).Google Scholar
2. Sinnamon, L. J., Bowman, R. M., Gregg, J. M., Appl. Phys. Lett. 78, 1724 (2001).Google Scholar
3. Dawber, M., Sinnamon, L. J., Scott, J. F., Gregg, J. M., Proceedings of the IMF Meeting, Madrid September 2001.Google Scholar
4. Lee, W., Kim, H., Yoon, S., J. Appl. Phys. 80, 5891 (1996). S. Yamamichi, H. Yabuta, T. Sakuma, Y. Miyasaka, Appl. Phys. Lett. 64, 1644 (1994)Google Scholar
5. Mitsui, T., Tatsuzaki, I., Nakamura, E., An Introduction to the Physics of Ferroelectrics, Gordon and Breach Science Publishers (1976).Google Scholar
6. Kittel, C., An Introduction to Solid State Physics, Seventh Edition, John Wiley and Sons (1996). M. E. Lines, A. M. Glass, Principles and Applications of Ferroelectrics and Related Materials, Clarendon Press, Oxford (1977).Google Scholar
7. Li, S., Eastman, J. A., Vetrone, J.M., Foster, C. M., Newnham, R. E., Cross, L. E., Jpn. J. Appl. Phys. 36, 5169 (1997). S. Li, J. A. Eastman, Z. Li, C.M. Foster, R. E.Newnham, L. E. Cross, Phys. Lett. A, 212, 341 (1996).Google Scholar
8. Kim, H. Joon, Oh, S. Hoon, Jang, Hyun M., App. Phys. Lett., 75, 3195 (1999)Google Scholar
9. , Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology, New Series Group III: Crystal and Solid State Physics, Vol. 16(a), edited by Hellwege, K.-H. and Hellwege, A. M., (Springer-Verlag, 1981).Google Scholar