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Prism Coupling as a Non Destructive Tool for Optical Characterization of (Al,Ga) Nitride Compounds

Published online by Cambridge University Press:  03 September 2012

E. Dogheche
Affiliation:
Laboratoire des Matériaux Avancés Céramiques (LAMAC) - Université de Valenciennes et du Hainaut-Cambrésis - Le Mont-Houy BP211 Valenciennes Cedex F-59342
B. Belgacem
Affiliation:
Laboratoire des Matériaux Avancés Céramiques (LAMAC) - Université de Valenciennes et du Hainaut-Cambrésis - Le Mont-Houy BP211 Valenciennes Cedex F-59342
D. Remiens
Affiliation:
Laboratoire des Matériaux Avancés Céramiques (LAMAC) - Université de Valenciennes et du Hainaut-Cambrésis - Le Mont-Houy BP211 Valenciennes Cedex F-59342
P. Ruterana*
Affiliation:
Laboratoire d'Etude et de Recherche sur les Matériaux (LERMAT - CNRS), ISMRA Bd Maréchal Juin, Caen Cedex F-14050
F. Omnes
Affiliation:
Centre de Recherche sur l' Hétéroépitaxie et ses Applications (CRHEA -CNRS), rue Bernard Gregory Sophia-Antipolis, Valbonne F-06560
*
Author for correspondence: ruterana@lermat8.ismra.fr, Fax: 33 231 4526 60
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Abstract

An optical characterization technique is proposed for GaN based compounds deposited on sapphire. In AlGaN films grown by MOCVD, the film optical behavior and the substrate to layer interface are qualified from the measured optical data. The experimental and theoretical approach used for this purpose is described in detail. The results clearly show bending effects at the interface which may be related to structural defects; a good agreement with transmission electronic microscopy analysis is obtained.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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