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Pressure Dependent Rapid Thermal Processing of CuInS2 Thin Films Investigated by In-Situ Energy Dispersive X-ray Diffraction

Published online by Cambridge University Press:  01 February 2011

Immo Michael Kötschau ,
Humberto Rodriguez-Alvarez ,
Cornelia Streeck ,
Alfons Weber ,
Manuela Klaus ,
Ingwer Asmus Denks ,
Jens Gibmeier ,
Christoph Genzel  and
Hans-Werner Schock
Immo Michael Kötschau
Affiliation:
koetschau@hmi.de, Hahn-Meitner-Institute, SE3 Technology, Glienicker Str. 100, Berlin, 14109, Germany, ++49-(0)30-8062-2789, ++49-(0)30-8062-3173
Humberto Rodriguez-Alvarez
Affiliation:
humberto.rodriguez@hmi.de, Hahn-Meitner-Institut, Glienicker Str. 100, Berlin, 14109, Germany
Cornelia Streeck
Affiliation:
cornelia.streeck@hmi.de, Hahn-Meitner-Institut, Glienicker Str. 100, Berlin, 14109, Germany
Alfons Weber
Affiliation:
alfons.weber@hmi.de, Hahn-Meitner-Institut, Glienicker Str. 100, Berlin, 14109, Germany
Manuela Klaus
Affiliation:
klaus@hmi.de, Hahn-Meitner-Institut, Glienicker Str. 100, Berlin, 14109, Germany
Ingwer Asmus Denks
Affiliation:
denks@hmi.de, Hahn-Meitner-Institut, Glienicker Str. 100, Berlin, 14109, Germany
Jens Gibmeier
Affiliation:
jens.gibmeier@hmi.de, Hahn-Meitner-Institut, Glienicker Str. 100, Berlin, 14109, Germany
Christoph Genzel
Affiliation:
genzel@hmi.de, Hahn-Meitner-Institut, Glienicker Str. 100, Berlin, 14109, Germany
Hans-Werner Schock
Affiliation:
hans-werner.schock@hmi.de, Hahn-Meitner-Institut, Glienicker Str. 100, Berlin, 14109, Germany
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Abstract

The rapid thermal processing (RTP) of Cu-rich Cu/In precursors for the synthesis of CuInS2 thin films is possible within a broad processing window regarding leading parameters like top temperature, heating rate, and Cu excess. The key reaction pathway for the CuInS2 phase formation has already been investigated by in-situ energy dispersive X-ray diffraction (EDXRD) for various precursor stoichiometries, heating rates and top temperatures at sulphur partial pressure conditions which are typical for physical vapour deposition processes. According to the phase diagrams of the binary sulphide phases, the sulfur partial pressure strongly determines the occuring crystalline phases. However, a controlled variation of the maximum sulphur partial in a typical RTP experiment has not been carried out yet. In order to study the influence of this parameter a special RTP reaction chamber was designed suitable for in-situ EDXRD experiments at the EDDI beamline at BESSY, Berlin. In a typical in-situ RTP/EDXRD experiment sulphur and a Cu/In/Mo/glass precursor are placed in an evacuated graphite reactor. The amount of sulphur determines the maximum pressure available at the top temperature of the experiment. As the RTP process proceeds a complete EDXRD spectrum is acquired every 10 seconds and thus the various stages of the reaction path and the crystalline phases can be monitored. The first experiments show already a significant change in the reaction pathway and the secondary Cu-S phases which segregate on top of the CuInS2 thin film during the reaction.

Keywords

crystal growthchemical synthesisx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1012: Symposium Y – Thin-Film Compound Semiconductor Photovoltaics-2007 , 2007 , 1012-Y13-09
Copyright
Copyright © Materials Research Society 2007

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