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Preparation, Structure and Properties of VOx and TiO2 Thin Films By Mocvd

Published online by Cambridge University Press:  21 February 2011

H. L. M. Chang ,
J. C. Parker ,
H. You ,
J. J. xu  and
D. J. Lam
H. L. M. Chang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
J. C. Parker
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
H. You
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
J. J. xu
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
D. J. Lam
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
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Abstract

Titanium and vanadium oxide thin films have been prepared in a cold wall low pressure MOCVD system for the study of MOCVD processing of epitaxial oxide films. Films were deposited on Si(111) and sapphire (0001) and (1120) at temperatures from 400 to 800°C. Processing parameter-structureproperty relationship was examined in detail and the result is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 343
Copyright
Copyright © Materials Research Society 1990

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References

[1]Ryabova, L.A., in Current Topics in Materials Science, Vol.7, ed. Kaldis, E. (North-Holland Publishing Co., Amsterdam, 1981), Chap. 5.Google Scholar
[2]Parker, J.C., Chang, H.L.M., Xu, J.J., and Lam, D.J., this Proceedings.Google Scholar
[3]Ohsaka, T., Izumi, F., Fujiki, Y., J. Raman Spec. 2, 321 (1978).Google Scholar
[4]Porto, S.P.S., Fleury, P.A., Damen, T.C., Phys. Rev. 14, 522 (1967).Google Scholar