Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-06-19T18:05:31.841Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of Superconducting Y‐Ba‐Cu‐O Thin Films by Mo‐Cvd

Published online by Cambridge University Press:  28 February 2011

Hiroshi Ohnishi ,
Yoshihiko Kusakabe ,
Minoru Kobayashi ,
Susumu Hoshinouchi ,
Hiroshi Harima  and
Kunihide Tachibana
Hiroshi Ohnishi
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corp. Tsukaguchi, Amagasaki, Hyogo, 661, Japan
Yoshihiko Kusakabe
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corp. Tsukaguchi, Amagasaki, Hyogo, 661, Japan
Minoru Kobayashi
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corp. Tsukaguchi, Amagasaki, Hyogo, 661, Japan
Susumu Hoshinouchi
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corp. Tsukaguchi, Amagasaki, Hyogo, 661, Japan
Hiroshi Harima
Affiliation:
Department of Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo‐ku, Kyoto, 606, Japan
Kunihide Tachibana
Affiliation:
Department of Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo‐ku, Kyoto, 606, Japan
Get access

Abstract

High‐Tc superconducting Y‐Ba‐Cu‐O films were prepared on Mg0(100) substrate by MO‐CVD technique without post annealing. The highest Tc obtained was 85K. The film was made up of dense matrix and dispersed fine particles. The Y‐Ba‐Cu composition of matrix was nearly equal to the 1:2:3 superconducting phase. The film was highly oriented with c‐axis perpendicular to the substrate. The lattice constant of the film was 11.68A.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 573
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Nakamori, T., Abe, H., Takahashi, T. and Shibata, S., Jpn.J.Appl.Phys. 27, L1265 (1988)Google Scholar
2 Shinohara, K., Munakata, F. and Yamanaka, M., Jpn.J.Appl.Phys., 27, L1683 (1988)Google Scholar
3 Panson, A.J., Charles, R.G., Schmidt, D.N., Szedon, J.R., Machiko, G.J. and Braginski, A.I., Appl.Phys.Lett., 53, 1756 (1988)Google Scholar
4 Berry, A.D., Gaskill, D.K., Holm, R.T., Cukauskas, E.J. and Henry, R.L., Appl.Phys.Lett., 52, 1743 (1988)Google Scholar
5 Zhao, J., Dahmen, K.H., Marcy, H.O., Tonge, L.M., Marks, T.J., Wessels, B.W. and Kannewurf, C.R., Appl.Phys.Lett., 53, 1750 (1988)Google Scholar
6 Yamane, H., Kurosawa, H., Hirai, T., Iwasaki, H., Kobayashi, N. and Muto, Y., Jpn.J.Appl.Phys., 27, L1495 (1988)Google Scholar
7 Berry, A.D., Holm, R.T., Cukauskas, E.J., Fatemi, M., Gaskill, D.K., Kaplan, R. and Fox, W.B., J.Cryst.Growth, 92, 344 (1988)Google Scholar
8 Abe, H., Turuoka, T. and Nakamori, T., Jpn.J.Appl.Phys., 27, L1273 (1988)Google Scholar
9 Yamane, H., Kurosawa, H., Iwasaki, H., Masumoto, H., Hirai, T., Kobayashi, N. and Muto, Y., Jpn.J.Appl.Phys., 27, L1275 (1988)Google Scholar
10 Yamane, H., Masumoto, H., Hirai, T., Iwasaki, H., Watanabe, K., Kobayashi, N. and Muto, Y., Appl.Phys.Lett., 51, 1548 (1988)Google Scholar
11 Takayama‐Muromachi, E., Uchida, Y., Matsui, Y. and Kato, K., Jpn.J.Appl.Phys., 26, L619 (1987)Google Scholar