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Preparation of Pb-Based Ferroelectric thin films by Ion- and Photo-Assisted Deposition

Published online by Cambridge University Press:  25 February 2011

Shigenori Hayashi ,
Kenji Iijima  and
Takashi Hirao
Shigenori Hayashi
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd. 3-15 Yagumo-nakamachi, Moriguchi, Osaka 570, Japan
Kenji Iijima
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd. 3-15 Yagumo-nakamachi, Moriguchi, Osaka 570, Japan
Takashi Hirao
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd. 3-15 Yagumo-nakamachi, Moriguchi, Osaka 570, Japan
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Abstract

Thin film process for Pb-based perovskite ferroelectrics has been investigated. Synthesis of epitaxial PLZT, PLT and PZT thin films by rfmagnetron sputtering in our laboratory was reviewed. Basic thin film process and applications were discussed. For further investigation, film preparation process was developed by co-deposition and assisted deposition techniques. The substrate temperature required for in-situ preparation of perovskite could be reduced to room temperature by an ion- and photoassisted co-evaporation technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 155
Copyright
Copyright © Materials Research Society 1992

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References

[1]Evans, J.T. andWomack, R.: IEEE J. Solid-State Circuits, 23, 1171 (1988).Google Scholar
[2]Iijima, K., Kawashima, S. andUeda, I.: Proc. 6th Int. Meet. on Ferroelectricity, Kobe 1985, Jpn.J.Appl.Phys., 24, Suppl.24-2, 482 (1985).Google Scholar
[3]Wasa, K., Yamazaki, O., Adachi, H., Kawaguchi, T. andSetsune, K.: IEEE J. Lightwave Tech. Lt–2 (1984) 710.Google Scholar
[4]Feldman, C., Rev. Sci. Instrum., 26, 463 (1955).Google Scholar
[5]Kusao, K., Wasa, K. andHayakawa, S., Jpn. J. Appl. Phys., 7, 437 (1968).Google Scholar
[6]Shintani, Y. andTada, O., J. Appl. Phys., 41, 2376 (1977).Google Scholar
[7]Ishida, M., Matsunami, H. andTanaka, T., 31, 433 (1977).Google Scholar
[8]Dharmadhikari, V.S. andGrannemann, W.W., J. Appl. Phys., 53, 8988 (1982).Google Scholar
[9]Krupanidhi, S.B., Maffei, N., Sayer, M. and El-Assal, K., J. Appl. Phys., 54, 6601 (1983).Google Scholar
[10]Iijima, K., Tomita, Y., Takayama, R. andUeda, I., Appl. Phys. Lett., 60, 361 (1987).Google Scholar
[11]Kushida, K. andTakeuchi, H., Appl. Phys. Lett., 50 1800 (1987).Google Scholar
[12]Haertling, G.H. andLand, C.E., J. Amer. Ceramic Soc., 54, 1 (1971).Google Scholar
[13]Haertling, G.H., Ferroelectrics, 75, 25 (1987).Google Scholar
[14]Adachi, H., Mitsuyu, T., Yamazaki, O. andWasa, K., J. Appl. Phys., 60, 736 (1986).Google Scholar
[15]Wasa, K., Adachi, H., Hirochi, K., Setsune, K., Kamada, T. andKitabatake, M., Thin Solid Films, 163, 175 (1988).Google Scholar
[16]Adachi, H., Mitsuyu, T., Yamazaki, O. andWasa, K., Jpn. J. Appl. Phys., Suppl. 24-2, 287 (1985).Google Scholar
[17]Wasa, K., Yamazaki, O., Adachi, H., Kawaguchi, T. andSetsune, K., IEEE J. Lightwave Tech., LT–2, 710 (1984).Google Scholar
[18]Iijima, K., Tomita, Y., Takayama, R. andUeda, I., J. Appl. Phys., 24, Suppl. 24-3, 13 (1985).Google Scholar
[19]Iijima, K., Takayama, R., Tomita, Y. andUeda, I., J. Appl.Phys., 60, 2941 (1986).Google Scholar
[20]Iijima, K., Ueda, I. andKugimiya, K., Jpn. J. Appl. Phys., 30 2149 (1991).Google Scholar
[21]Adachi, H., Mitsuyu, T., Yamazaki, O. andWasa, K., Jpn. J. Appl. Phys., Suppl. 24-3, 13 (1985).Google Scholar
[22]Hayashi, S., Iijima, K. andHirao, T.: Proc. 8th Meet. on Ferroelectric Materials & Their Applications, Kyoto 1991, Jpn. J. Appl. Phys. 30 (1991) 2186.Google Scholar