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Preparation of High-Quality a-SiGe:H films with Low Impurity Oncentration by the Hydrogen Dilution Method

Published online by Cambridge University Press:  21 February 2011

Katsunobu Sayama ,
Hisao Haku ,
Hiroshi Dohjoh ,
Masao Isomura ,
Noboru Nakamura ,
Shinya Tsuda ,
Yasuo Kishi ,
Shouichi Nakano  and
Yukinori Kuwano
Katsunobu Sayama
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Hisao Haku
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Hiroshi Dohjoh
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Masao Isomura
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Noboru Nakamura
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Shinya Tsuda
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Yasuo Kishi
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Shouichi Nakano
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Yukinori Kuwano
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
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Abstract

A-SiGe: H film properties with a low impurity concentration were investigated using a super chamber in the range of Ge content of 0% to 36%. These a-SiGe films can maintain a high photosensitivity of about 106 for Ge content up to 13%, which is comparable to high-quality a~Si films. It was found that impurity incorporation deteriorates optoelectronic properties in the range of a small amount of Ge content, and film rigidity in the range of a large amount of Ge content. Using high-quality a-SiGe films with a low impurity concentration in solar cells, the highest conversion efficiency of 3.15% was obtained for an a-SiGe single-junction cell under red light (AM-1.5, 100mW/cm2 light through the optical filter, in which the wavelength of transmitted light is longer than 650nm). A stacked cell of a-Si/a-Si/a-SiGe has a conversion efficiency of 11.9%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 691
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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