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Preparation of Bi2SiO5-SrBi2Ta2O9 Ferroelectric Thin Films by RF Magnetron Sputtering

Published online by Cambridge University Press:  11 February 2011

Shin Kikuchi  and
Hiroshi Ishiwara
Shin Kikuchi
Affiliation:
R & D Association for Future Electron Devices, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, JAPAN, E-mail: kikuchi@neuro.pi.titech.ac.jp
Hiroshi Ishiwara
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, JAPAN, E-mail: kikuchi@neuro.pi.titech.ac.jp
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Abstract

Si-added SrBi2Ta2O9 (SBT) ferroelectric films were prepared by RF magnetron sputtering on a Pt/Ti/SiO2/Si (100) structure. The films were deposited at temperatures below 100°C for preventing Bi evaporation and crystallized at 800°C in air. A typical composition was Sr0.79Bi2.37Ta2.00Si0.2Ox. The remnant polarization value(2Pr) of the Si-added SBT film was 16C/cm2 and leakage current density was 5×10-8A/cm2. The current density was significantly decreased by adding Si atoms.

Keywords

SBTBSOferoelectric thin filmRF magnetron sputteringleakage current density
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U12.8
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Kijima, T., Ishiwara, H.: Jpn. J. Appl. Phys. 41 (2002) No. 6B pp. L716 – L719Google Scholar
2. Kijima, T., Ishiwara, H.: Jpn. J. Appl. Phys. 41 (2002) No. 10B pp. L1164 – L1166Google Scholar