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Preparation and Properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using Flash-MOCVD

Published online by Cambridge University Press:  10 February 2011

T. Ami ,
K. Hironaka ,
C. Isobel ,
N. Nagel ,
M. Sugiyama ,
Y. Ikeda ,
K. Watanabe ,
A. Machida ,
K. Miura  and
M. Tanaka
T. Ami
Affiliation:
Magnetic & Inorganic Materials Res. Gp.
K. Hironaka
Affiliation:
Magnetic & Inorganic Materials Res. Gp.
C. Isobel
Affiliation:
Yagi-microdevices Lab., Materials Research Division, SONY Research Center
N. Nagel
Affiliation:
Yagi-microdevices Lab., Materials Research Division, SONY Research Center
M. Sugiyama
Affiliation:
Yagi-microdevices Lab., Materials Research Division, SONY Research Center
Y. Ikeda
Affiliation:
Center for Materials Analysis, SONY Research Center
K. Watanabe
Affiliation:
Magnetic & Inorganic Materials Res. Gp.
A. Machida
Affiliation:
Magnetic & Inorganic Materials Res. Gp.
K. Miura
Affiliation:
Magnetic & Inorganic Materials Res. Gp.
M. Tanaka
Affiliation:
Magnetic & Inorganic Materials Res. Gp.
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Abstract

Ferroelectric Bi2 SrTa2 O9 thin films were successfully prepared by liquid delivery MOCVD, and structural and electrical properties were investigated. As-deposited films showed sharp distinct peaks, which were indexed assuming a fluorite-type structure. These precursors were transformed to bismuth-layered structures by annealing at 800 °C in flowing oxygen. Reasonable ferroelectric properties were observed in a film with 170 nm-thickness. Remanent polarization and coercive field were estimated to be 5.2 μC/cm2 and 52 kV/cm, respectively, at 5V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 415: Symposium BB – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II , 1995 , 195
Copyright
Copyright © Materials Research Society 1996

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References

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