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Preparation and Electrical Conductivity Measurement of LiSbO3 Thin Films

Published online by Cambridge University Press:  15 February 2011

K. Ozawa
Affiliation:
National Research Institute for Metals, 1–2–1, Sengen, Tsukuba-shi, Ibaraki, 305, Japan
Y. Sakka
Affiliation:
National Research Institute for Metals, 1–2–1, Sengen, Tsukuba-shi, Ibaraki, 305, Japan
M. Amano
Affiliation:
National Research Institute for Metals, 1–2–1, Sengen, Tsukuba-shi, Ibaraki, 305, Japan
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Abstract

LiSbO3 thin films have been prepared by the sol-gel process with metal alkoxides using a spin-coating method. The (Oll)-oriented and randomly oriented LiSbO3 thin films are obtained by the precursor film crystallizing under an atmosphere of a flowing mixture of water vapor and oxygen, and an air atmosphere, respectively. The two different atmospheres also affect the crystallization temperature of the films. The electrical conductivity of the (Oll)-oriented LiSbO3 thin film is approximately one order of magnitude larger than that of the randomly oriented LiSbO3 thin film in the temperature range of 380 to 600°C.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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