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Precipitation, Phase Transformation, and Enhanced Diffusion in Ion-Implanted Silicon

Published online by Cambridge University Press:  26 February 2011

S. J. Pennycook ,
R. J. Culbertson  and
S. D. Berger
S. J. Pennycook
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6024
R. J. Culbertson
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6024
S. D. Berger
Affiliation:
Cavendish Laboratory, Madingley Road, Cambridge, U.K.
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Abstract

Z-contrast scanning transmission electron microscopy has been used to study the connection between dopant precipitation and phase transformation in high dose In+ and Sb+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 107 over tracer crystalline values. With Sb+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 411
Copyright
Copyright © Materials Research Society 1988

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References

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