Hostname: page-component-848d4c4894-75dct Total loading time: 0 Render date: 2024-05-27T01:53:48.826Z Has data issue: false hasContentIssue false
  • English
  • Français

Potential Limitations of Conventional Photomasks Due to Inherent Internal Stress - the Need for an Alternative Opaque Layer

Published online by Cambridge University Press:  21 February 2011

James A. Cairns ,
Chi-Wing Liu ,
Andrew C. Hourd ,
Robert P. Keatch  and
Brian Lawrenson
James A. Cairns
Affiliation:
University of Dundee, Department of Applied Physics and Electronic & Mechanical Engineering, Dundee DDI 4HN, Scotland.
Chi-Wing Liu
Affiliation:
University of Dundee, Department of Applied Physics and Electronic & Mechanical Engineering, Dundee DDI 4HN, Scotland.
Andrew C. Hourd
Affiliation:
University of Dundee, Department of Applied Physics and Electronic & Mechanical Engineering, Dundee DDI 4HN, Scotland.
Robert P. Keatch
Affiliation:
University of Dundee, Department of Applied Physics and Electronic & Mechanical Engineering, Dundee DDI 4HN, Scotland.
Brian Lawrenson
Affiliation:
University of Dundee, Department of Applied Physics and Electronic & Mechanical Engineering, Dundee DDI 4HN, Scotland.
Get access

Abstract

Conventional photomasks consisting of chromium films on fused silica or glass substrates are widely used. However, it is becoming apparent that interfacial stress between the chromium and the transparent substrate, as well as the need for wet chemical processing for pattern production, will ultimately limit a photomask’s ability to be patterned reproducibly. An alternative approach is to chose an opaque layer which exhibits minimum interfacial stress with respect to the substrate while having the ability of being patterned by fluorocarbon gas plasma processing.

This work describes the use of silicon/germanium as an alternative opaque layer, which can be deposited uniformly by co-sputtering and patterned by fluorocarbon reactive ion etching. The suitability of the material in terms of interfacial stress is demonstrated by the use of microfabricated silicon dioxide cantilever structures. In addition, the influence of Si/Ge ratio on optical properties, the plasma processing performance, and chemical compatibility with the rest of the photomask making process is described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 239
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Keatch, R. P. and Lawrenson, B., Microelectronics Journal, 25(5), pp. 393–399 (1994).Google Scholar
2. Maissel, I. and Glang, R., in Handbook on Thin Film Technology. (McGraw-Hill, New York), pp 12.22–12.24, (1970).Google Scholar
3. Ma, T.P., in Properties of silicon, INSPEC, IEE, ISBN 0–85296–475–7, pp.650–661, No. 4, (1987).Google Scholar