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Positron-Beam Observation of Dopant-Defect Complexes in Amorphized Silicon

Published online by Cambridge University Press:  01 January 1993

R.D. Goldberg ,
T.C. Leung ,
I.V. Mitchell  and
Peter J. Schultz
R.D. Goldberg
Affiliation:
Department of Physics, The University of Western Ontario, London,Ontario,Canada, N6A 3K7
T.C. Leung
Affiliation:
Department of Physics, The University of Western Ontario, London,Ontario,Canada, N6A 3K7
I.V. Mitchell
Affiliation:
Department of Physics, The University of Western Ontario, London,Ontario,Canada, N6A 3K7
Peter J. Schultz
Affiliation:
Department of Physics, The University of Western Ontario, London,Ontario,Canada, N6A 3K7
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Abstract

The ability of positrons to probe local defect structures has been utilized to compare differences in residual damage structures in self-irradiated silicon for differing tempera¬tures of the implanted substrate. Sb-doped < 100 > silicon was self irradiated with a 600 keV beam to fluences ranging from 3 x 1014 to 1 X 1016 ions/cm2 at liquid nitrogen, room and slightly elevated (61° C) temperatures. A defect was identified near the end-of-range of the implanted ions whose concentration diminished at higher implant temperatures, but was only weakly dependent on total fluence. Comparison between Sb- and B-doped Si suggests that the defect is impurity based.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 1043
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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