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Positron Annihilation Spectroscopy of As Vacancies in As-Grown GaAs
Published online by Cambridge University Press: 26 February 2011
Abstract
Positron lifetime measurements give direct evidence on positron trapping in monovacancy defects in n-type, but not in p-type nor in semi-insulating LEC-grown GaAs. The defects are identified as As vacancies. Two Fermi level controlled transitions have been found in positron lifetime spectra at 0.03±0.01 eV and at 0.10±0.01 eV below the conduction band. We attribute them to the 2-/- and - / 0 ionisation levels of the As vacancy.
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- Copyright © Materials Research Society 1988
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