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Positron Annihilation Spectroscopy of As Vacancies in As-Grown GaAs

Published online by Cambridge University Press:  26 February 2011

C. Corbel ,
M. Stucky ,
P. Hautojärvi ,
K. Saarinen  and
P. Moser
C. Corbel
Affiliation:
Centre d'Etudes Nucléaires de Saclay, INSTN, 91191 Gif sur Yvette Cedéx, France
M. Stucky
Affiliation:
Centre d'Etudes Nucléaires de Saclay, INSTN, 91191 Gif sur Yvette Cedéx, France
P. Hautojärvi
Affiliation:
Helsinki University of Technology, Laboratory of Physics, 02150 Espoo, Finland
K. Saarinen
Affiliation:
Helsinki University of Technology, Laboratory of Physics, 02150 Espoo, Finland
P. Moser
Affiliation:
Centre d'Etudes Nucléaires de Grenoble, DRF-PHS, 38041 Grenoble Cedéx, France
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Abstract

Positron lifetime measurements give direct evidence on positron trapping in monovacancy defects in n-type, but not in p-type nor in semi-insulating LEC-grown GaAs. The defects are identified as As vacancies. Two Fermi level controlled transitions have been found in positron lifetime spectra at 0.03±0.01 eV and at 0.10±0.01 eV below the conduction band. We attribute them to the 2-/- and - / 0 ionisation levels of the As vacancy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 475
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Positrons in Solids, edited by Hautojärvi, P., Topics in Currents Physics, vol.12 (Springer, Heidelberg 1979).Google Scholar
2.Hautojärvi, P., in Characterization of Defects in Materials, edited by Siegel, R. W., Weertman, J. R. and Sinclair, R. (Mat. Res. Soc. Proc. 82 (Materials Research Society, Pittsburgh 1987) p. 3 - 21.Google Scholar
3.Dlubek, G. and Krause, R., Phys. Stat. Sol.(a) 102. 443 (1987).Google Scholar
4.Dannefaer, S., Phys. Stat. Sol.(a) 102, 481 (1987).Google Scholar
5.Puska, M.J., Jepsen, O., Gunnarson, O., and Nieminen, R.M., Phys. Rev. B 34, 2965 (1986); Puska, M.J. and Corbel, C., to be published.Google Scholar
6.Dannefaer, S and Kerr, D.. J. Appl. Phys. 60, 591 (1987).Google Scholar
7.Dlubek, G., Brummer, O., Plazaola, F., and Hautojärvi, P., J. Phys. C, 18, 331 (1986).Google Scholar
8.Van der Rest, J. and Pecheur, P., J. Phys. C 17. 85 (1987).Google Scholar
9.Puska, M. J., to be published; see Phys. Stat. Sol. (a) 102, 11 (1987).Google Scholar
10.Loualiche, S., Nouailhat, A., Guillot, G., and Lannoo, M., Phys. Rev. B 20, 5822 (1987).Google Scholar
11.Pons, D. and Bourgoin, J., J. Phys. C 18, 3839 (1987).Google Scholar
12.Corbel, C., Stucky, M., Moser, P., Hautojärvi, P. and Saarinen, K., to be published.Google Scholar
13.Stucky, M., Corbel, C., Geffroy, B., Moser, P. and Hautojärvi, P., in Defects in Semiconductors, edited by von Bardeleben, H. J., Materials Science Forum, vols. 10–12 (Trans Tech Publications, Switzerland, 1986) p. 265.Google Scholar