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Porous Semiconductor Films For Photo-Electrical Applications

Published online by Cambridge University Press:  10 February 2011

R. Könenkamp
Affiliation:
Hahn-Meitner Institut Berlin, Glienicker Str. 100, 14109 Berlin, Germany
P. Hoyer
Affiliation:
Hahn-Meitner Institut Berlin, Glienicker Str. 100, 14109 Berlin, Germany
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Abstract

We report on the preparation and characterization of semiconductor devices based on porous nano-crystalline TiO2 films. We present experimental results on photoconduction to elucidate the role of trap states in this material. We then analyse the behavior of a SnO2/TiO2/Pt Schottkydiode and finally present spectral photoresponse data obtained on a hetero-junction between TiO2 films and PbS quantum dots. We find that the porous films hold some promise for electronic applications, in which fast reponse times are not required.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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