Hostname: page-component-848d4c4894-jbqgn Total loading time: 0 Render date: 2024-06-19T03:06:35.747Z Has data issue: false hasContentIssue false
  • English
  • Français

The Poly-Si Tfts Fabricated by Novel Oxidation Method with Intermediate Oxide

Published online by Cambridge University Press:  10 February 2011

C-M Park ,
J-S Yoo ,
B-H Min  and
M-K Han
C-M Park
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
J-S Yoo
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
B-H Min
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
M-K Han
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
Get access

Abstract

We have fabricated a poly-Si TFT using a novel oxidation method, which improves the surface roughness at the interface between the poly-Si layer and the gate oxide layer. Compared with the poly-Si TFTs fabricated by the conventional oxidation method, the proposed poly-Si TFT exhibits the remarkable enhancement of the electrical parameters, such as the subthreshold swing and the threshold voltage. It is observed that the proposed poly-Si TFT has a higher dielectric strength and the device characteristics are not degraded significantly after an electrical stress. The improvement of the surface roughness at oxide/poly-Si interface is found to be critical to enhance the device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 183
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. DiMaria, J. and Kerr, D. R., Appl. Phys. Lett., 27, 505 (1975)Google Scholar
2. Anderson, R.M. and Kerr, D. R., J. Electrochem. Soc., 48, 4834 (1977)Google Scholar
3. Takechi, , Uchida, H., and Kaneko, S., Proc. Mat. Res. Soc. Symp., 258, 955 (1992)Google Scholar
4. Moazzami, and Hu, C., IEEE Electron Device Lett., 14, (1993)Google Scholar
5. Jun, C., Kim, Y. S., Han, M. K., Kim, J. W., and Kim, K. B., Appl. Phys. Lett., 66, 2206 (1995)Google Scholar