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Polymorphous Silicon: Transport Properties and Solar Cell Applications

Published online by Cambridge University Press:  15 February 2011

C. Longeaud ,
J. P. Kleider ,
M. Gauthier ,
R. Brtiggemann ,
Y. Poissant  and
P. Roca i Cabarrocas
C. Longeaud
Affiliation:
Laboratoire de Génie Electrique de Paris (UMR 8507 CNRS), Supélec, Universités Paris VI et XI, Plateau de Moulon, 91192 Gif sur Yvette Cedex, France, longeaud@lgep.supelec.fr
J. P. Kleider
Affiliation:
Laboratoire de Génie Electrique de Paris (UMR 8507 CNRS), Supélec, Universités Paris VI et XI, Plateau de Moulon, 91192 Gif sur Yvette Cedex, France, longeaud@lgep.supelec.fr
M. Gauthier
Affiliation:
Laboratoire de Génie Electrique de Paris (UMR 8507 CNRS), Supélec, Universités Paris VI et XI, Plateau de Moulon, 91192 Gif sur Yvette Cedex, France, longeaud@lgep.supelec.fr
R. Brtiggemann
Affiliation:
Laboratoire de Génie Electrique de Paris (UMR 8507 CNRS), Supélec, Universités Paris VI et XI, Plateau de Moulon, 91192 Gif sur Yvette Cedex, France, longeaud@lgep.supelec.fr
Y. Poissant
Affiliation:
Laboratoire de Physique des Interfaces et Couches Minces (UMR 7647 CNRS), Ecole Polytechnique, 91128 Palaiseau, France
P. Roca i Cabarrocas
Affiliation:
Laboratoire de Physique des Interfaces et Couches Minces (UMR 7647 CNRS), Ecole Polytechnique, 91128 Palaiseau, France
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Abstract

Transport properties of hydrogenated polymorphous silicon layers (pm-Si:H) deposited at 150°C under various pressures in the range 80-293 Pa in sandwich (Schottky and p-i-n diodes) and coplanar structures have been compared to those of hydrogenated amorphous silicon (a-Si:H) samples deposited at the same temperature in standard conditions. The layers have been studied as-deposited, annealed and after light-soaking. With increasing pressure up to 240 Pa: i) the density of states above the Fermi level decreases as determined by means of the modulated photocurrent technique, ii) the mobility-lifetime products of electrons and holes measured by means of steady-state photoconductivity and photocarrier grating techniques both increase. The highest values for the diffusion length of minority carriers exceed 200 nm. Capacitance measurements as a function of frequency and temperature show that the density of states at the Fermi level is lower in the pm-Si:H than in the a-Si:H films. After light-soaking the diffusion length of minority carriers in a-Si:H is reduced by a factor oftwo whereas it is less reduced or not affected in the pm-Si:H layers. Solar cells including this new material present an excellent stability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 501
Copyright
Copyright © Materials Research Society 1999

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