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Polymorphous Silicon Films Produced in Large Area Reactors by PECVD at 27.12 MHz and 13.56 MHz

Published online by Cambridge University Press:  01 February 2011

H. Águas ,
L. Raniero ,
L. Pereira ,
E. Fortunato ,
P. Roca i Cabarrocas  and
R. Martins
H. Águas
Affiliation:
Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa and CEMOP, Campus da Caparica, 2829-516 Caparica, Portugal
L. Raniero
Affiliation:
Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa and CEMOP, Campus da Caparica, 2829-516 Caparica, Portugal
L. Pereira
Affiliation:
Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa and CEMOP, Campus da Caparica, 2829-516 Caparica, Portugal
E. Fortunato
Affiliation:
Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa and CEMOP, Campus da Caparica, 2829-516 Caparica, Portugal
P. Roca i Cabarrocas
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, 91128 Palaiseau Cedex, France
R. Martins
Affiliation:
Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa and CEMOP, Campus da Caparica, 2829-516 Caparica, Portugal
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Abstract

This work refers to a study performed on polymorphous silicon (pm-Si:H) at excitation frequencies of 13.56 and 27.12 MHz in a large area PECVD reactor. The plasma was characterised by impedance probe measurements, aiming to identify the plasma conditions that lead to produce pm-Si:H films. The films produced were characterised by spectroscopic ellipsometry, infrared and Raman spectroscopy and hydrogen exodiffusion experiments, which are techniques that permit the structural characterisation of the pm-Si films and to study the possible differences between the films deposited at 13.56 and 27.12 MHz. Conductivity measurements were also performed to determine the transport properties of the films produced. The set of data obtained show that the 27.12 MHz pm-Si:H can be grown at higher rates with less hydrogen dilution and power density, being the resulting films denser, chemically more stable and with improved performances than the pm-Si:H films grown at 13.56 MHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A5.13
Copyright
Copyright © Materials Research Society 2003

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