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Polycrystalline GeC Thin Films Deposited Using a Unique Hollow Cathode Sputtering Technique

Published online by Cambridge University Press:  01 February 2011

R. J. Soukup ,
N. J. Ianno ,
J. S. Schrader  and
V. L. Dalal
R. J. Soukup
Affiliation:
Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511, USA
N. J. Ianno
Affiliation:
Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511, USA
J. S. Schrader
Affiliation:
Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511, USA
V. L. Dalal
Affiliation:
Department of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011,USA
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Abstract

Experimental results on thin films of the new material GexC1-x, deposited by a unique dual plasma hollow cathode sputtering technique are presented. The mostimportant contribution of this work is that it shows that by using non-equilibrium growth conditions resulting from the hollow cathode technique, one can grow Group IV materials which cannot otherwise be grown using normal CVD or MBE processes. The sputtering is accomplished by igniting a dc plasma in the Ar and H2 gases which are fed through Ge and C nozzles.

The GeC films are grown on etched Si (100), on Si with the native oxide and on glass. The films grown on glass were quite disordered, but the films grown on both types of Si substrates were very ordered in nature. This order has been characterized using Xray diffraction (XRD) and Raman spectroscopy.

Films with as much as 8% C have been deposited. In order to produce useful GexC1-x films, the C must bond to the Ge at lattice sites. Evidence of this desired GeC bond has been seen using Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy, and XRD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A20.2
Copyright
Copyright © Materials Research Society 2005

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