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Polishing Behavior of the Various Interconnect Thin Films in Cu Damascene Process with Different Slurries

Published online by Cambridge University Press:  01 February 2011

Parshuram B. Zantye ,
Arun K. Sikder  and
Ashok Kumar
Parshuram B. Zantye
Affiliation:
Department of Mechanical Engineering Nanomaterials and Nanomanufacturing Research CenterUniversity of South Florida, Tampa, FL 33620
Arun K. Sikder
Affiliation:
Nanomaterials and Nanomanufacturing Research CenterUniversity of South Florida, Tampa, FL 33620
Ashok Kumar
Affiliation:
Department of Mechanical Engineering Nanomaterials and Nanomanufacturing Research CenterUniversity of South Florida, Tampa, FL 33620
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Abstract

Chemical Mechanical Polishing is a key technology for Cu damascene wiring process in integrated circuit (IC) manufacturing. It is important to understand the effects of mechanical and tribological properties of the coatings that form a part of Cu damascene structure on the CMP process in order to successfully evaluate and implement these materials. In this paper, we present tribological properties of different interlayer coatings (SiLKTM, Ta and Cu) during their CMP process using different Cu and barrier selective slurries. A micro CMP tester was used to study the fundamental aspects of the CMP process. The coefficient of friction (COF) and acoustic emission (AE) signals were acquired in situ to monitor the process and to see the difference in polishing behavior of these coatings. The issues of end point detection and slurry selectivity are discussed in detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F6.9
Copyright
Copyright © Materials Research Society 2003

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