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Polarized Electroabsorption and Carrier Mobilities in Amorphous Silicon Alloys

Published online by Cambridge University Press:  16 February 2011

Y. Tsutsumi ,
H. Okamoto ,
K. Hattori  and
Y. Hamakawa
Y. Tsutsumi
Affiliation:
Department of Electrical Engineering, Akashi College of Technology, Akashi, Hyogo 674, Japan
H. Okamoto
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
K. Hattori
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
Y. Hamakawa
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

We report on the free carrier Mobilities Measured by polarized electroabsorption Method. The result shows that the electron mobility reaches about 11.2cm2/Vs for device quality undoped a-Si:H, while the hole mobility is about 20% of the electron Mobility. Alloying with carbon leads to a continuous reduction of Mobility, with the largest drop (15%) for a carbon concentration of about 10 at.%, this being in sharp contrast to a less-pronounced effect by germanium alloying.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 343
Copyright
Copyright © Materials Research Society 1994

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References

1. Weiser, G., Dersch, U. and Thomas, P., Philos. Mag. B, 57, 721 (1988).CrossRefGoogle Scholar
2. Okamoto, H., Hattori, K. and Hamakawa, Y., J. Non-Cryst. Solids 137–138, 672 (1991).Google Scholar
3. Tsutsumi, Y., Okamoto, H., Hattori, K. and Hamakawa, Y., Philos. Mag. B, 69, 253 (1994);CrossRefGoogle Scholar
Tsutsumi, Y., Yamamoto, H., Hattori, K., Okamoto, H. and Hamakawa, Y., J. Non-Cryst. Solids 164–166, 893 (1993).Google Scholar
4. Aspenes, D. E. and Bottka, N., in Semiconductor and semimetals. 9, edited by Willardson, R. K. and Beer, A. C. (Academic, New York, 1972), p. 457.Google Scholar
5. Jackson, W.S., Kelso, S.M., Tsai, C.C., Allen, J.W. and Oh, S.-J., Phys. Rev. B, 31, 5187 (1985).Google Scholar
6. Okamoto, H., Hattori, K. and Hamakawa, Y., J. Non-Cryst. Solids 164–166, 445 (1993).Google Scholar
7. Tsuji, K. and Minomura, S., J. de Phys. C4, 42, 233 (1981).Google Scholar
8. Hattori, K., Okamoto, H. and Hamakawa, Y., J. Non-Cryst. Solids 114, 678 (1989).Google Scholar
9. Tiedje, T., in Semiconductor and semimetals, 21, C, edited by Pankove, J. I. (Academic, New York, 1972), p. 207.Google Scholar
10. Karg, H., Kruhler, W., Moller, M. and Klitzing, K. v., J. Appl. Phys., 60, 2016 (1986).Google Scholar