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Polarity Control of GaN Films Grown by Metal Organic Chemical Vapor Deposition on (0001) Sapphire Substrates

Published online by Cambridge University Press:  01 February 2011

Seiji Mita ,
Ramon Collazo ,
Raoul Schlesser  and
Zlatko Sitar
Seiji Mita
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7919, U.S.A.
Ramon Collazo
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7919, U.S.A.
Raoul Schlesser
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7919, U.S.A.
Zlatko Sitar
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7919, U.S.A.
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Abstract

The polarity control of GaN films grown on c-plane sapphire substrates by low pressure metal organic chemical vapor deposition (MOCVD) was achieved by using N2 as a diluent and transport gas. The type of polarity was governed by the substrate treatment prior to the GaN growth. N-face (-c) GaN films were only obtained by pre-nitridation of the sapphire substrate after a H2 anneal, while Ga-face (+c) GaN films were grown directly on the substrates or on properly annealed AlN buffer layers. In addition, GaN films on improperly annealed AlN buffer layers, that is, under- or over-annealed buffer layers, yielded films with mixed polarity. Smooth N-face GaN films with 2.5 nm RMS roughness, as determined by atomic force microscopy (AFM), were obtained with shorter nitridation times (less than 2 min). Wet chemical etching in an aqueous solution of potassium hydroxide (KOH) was used to determine the polarity type.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.20
Copyright
Copyright © Materials Research Society 2005

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References

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